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or multiple oxidation cycles
6-0703 (Reapproved 0623)
• Conventional recipe download modes such as Pre-Download Mode or Full Download Mode
a Standard for monitoring UPW
MF136600 - SEMI MF1366 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry StdTpc-XML or multiple oxidation cyclesThis Test Method covers the determination of total oxygen concentration in the bulk of single crystal silicon substrates using SIMS. This Test Method can be used for silicon in which the dopant concentrations are less than 0. 2% (1 atoms cm3 1020 atoms cm3) for boron, antimony, arsenic, and phosphorus (refer to SEMI MF723). This Test Method is especially applicable for silicon that has resistivity between 0. 0012 cm and 1 cm for p type silicon and
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